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Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

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2 Author(s)
Fitzpatrick, P.R. ; Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 ; Ekerdt, J.G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.3253534 

Metal insulator semiconductor structures were fabricated from n-Si(100) and n-Ge(100) wafers passivated with thin (4.5–5 nm) films of N-rich BCxNy (0.09≤x≤0.15, 0.38≤y≤0.52) and with atomic layer deposition HfO2 (10 nm) as the gate dielectric. C-V and I-V characteristics of devices with BCxNy films grown at 275–400 °C by chemical vapor deposition showed that lower deposition temperatures resulted in improved electrical characteristics, including decreased hysteresis, lower VFB shift, lower leakage current, and less C-V stretch out. The electrical improvement is attributed to decreased bulk and interfacial defects in lower temperature deposited BCxNy films, which also had a higher optical bandgap [Eg=3.55 eV at 275 °C on Ge(100)], lower subbandgap absorption, lower index of refraction [n(633 nm)=1.84 at 275 °C on Ge(100)], reduced O uptake during ambient exposure, and increased percentage of B. Even for the lowest growth temperature studied (275 °C), BCxNy-passivated Ge(100) devices had considerable hysteresis (1.05 V), and electrical characteristics worsened after a postmetallization anneal. BCxNy-passivated Si(100) devices outperformed similar Ge(100) devices likely due to the higher interface state densities at the BCxNyGe(100) interface associated with the higher relative inertness of Ge(100) to thermal nitridation. C-rich BC0.61N0.08 films were also investigated but large amounts of hysteresis and fixed negative charge motivated the abandonment of these films.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 6 )

Date of Publication:

Nov 2009
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