Cart (Loading....) | Create Account
Close category search window

Electrical characteristics of thin boron carbonitride films on Ge(100) and Si(100)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Fitzpatrick, P.R. ; Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 ; Ekerdt, J.G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Metal insulator semiconductor structures were fabricated from n-Si(100) and n-Ge(100) wafers passivated with thin (4.5–5 nm) films of N-rich BCxNy (0.09≤x≤0.15, 0.38≤y≤0.52) and with atomic layer deposition HfO2 (10 nm) as the gate dielectric. C-V and I-V characteristics of devices with BCxNy films grown at 275–400 °C by chemical vapor deposition showed that lower deposition temperatures resulted in improved electrical characteristics, including decreased hysteresis, lower VFB shift, lower leakage current, and less C-V stretch out. The electrical improvement is attributed to decreased bulk and interfacial defects in lower temperature deposited BCxNy films, which also had a higher optical bandgap [Eg=3.55 eV at 275 °C on Ge(100)], lower subbandgap absorption, lower index of refraction [n(633 nm)=1.84 at 275 °C on Ge(100)], reduced O uptake during ambient exposure, and increased percentage of B. Even for the lowest growth temperature studied (275 °C), BCxNy-passivated Ge(100) devices had considerable hysteresis (1.05 V), and electrical characteristics worsened after a postmetallization anneal. BCxNy-passivated Si(100) devices outperformed similar Ge(100) devices likely due to the higher interface state densities at the BCxNyGe(100) interface associated with the higher relative inertness of Ge(100) to thermal nitridation. C-rich BC0.61N0.08 films were also investigated but large amounts of hysteresis and fixed negative charge motivated the abandonment of these films.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 6 )

Date of Publication:

Nov 2009
IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.