The authors present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon suboxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550 nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited by reactive rf cosputtering. Second, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx<Er> matrix via a hard annealing at 1150 °C. The SiO2 and the a-SiOx<Er> thicknesses were designed to support resonances near the pumping wavelength (∼500 nm), near the Si-NC emission (∼800 nm) and near the a-SiOx<Er> emission (∼1550 nm) enhancing the optical- pumping process.