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Resonant structures based on amorphous silicon suboxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm

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4 Author(s)
Figueira, D.S.L. ; Instituto de Fisica “Gleb Wataghin,” Universidade Estadual de Campinas-UNICAMP, São Paulo 13083-970, Brazil ; Mustafa, D. ; Tessler, L.R. ; Frateschi, N.C.

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The authors present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon suboxide doped with Er3+ (a-SiOx<Er>) layers with silicon nanoclusters (Si-NC). Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550 nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx<Er> matrix was deposited by reactive rf cosputtering. Second, an extra pump channel (4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-SiOx<Er> matrix via a hard annealing at 1150 °C. The SiO2 and the a-SiOx<Er> thicknesses were designed to support resonances near the pumping wavelength (∼500 nm), near the Si-NC emission (∼800 nm) and near the a-SiOx<Er> emission (∼1550 nm) enhancing the optical- pumping process.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 6 )