Cart (Loading....) | Create Account
Close category search window

Proton irradiation effects on Sb-based heterojunction bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

14 Author(s)
Lo, C.F. ; Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 ; Kim, H.-Y. ; Kim, J. ; Chen, Shu-Han
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In0.52Al0.48As/In0.39Ga0.61As0.77Sb0.23/In0.53Ga0.47As double heterojunction bipolar transistors (DHBTs) were irradiated with 5 MeV protons at fluences from 2×1011 to 2×1015 protons/cm2. The radiation produced significant increases in generation-recombination leakage current in both emitter-base and base-collector junctions. The DHBTs irradiated with a dose of 2×1011 cm-2, which was equivalent to around 40 years of exposure in low Earth orbit, showed minimal changes in the junction ideality factor, generation-recombination leakage current, current gain, and output conductance. The InAlAs/InGaAsSb/InGaAs DHBTs appear to be well suited to space or nuclear industry applications.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:27 ,  Issue: 6 )

Date of Publication:

Nov 2009

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.