By Topic

Nano-transient current and transient resistance on the conductive or dissipative materials for extremely sensitive devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kouichi Suzuki ; Fab Solutions, Inc., Nissei Sinmizonokuti Bldg. 5F, 3-5-7 Hisamoto, Takatsuku, Kawasaki, Kanagawa 213-0011, Japan ; Michio Sato

Conductive and dissipative implements are used to guard extremely sensitive devices against electrostatic discharge. We developed the methods of IV characteristic, nano transient current and transient resistance from basic theory and evaluated the implements. Consequently, almost all the carbon molecules mixed implements are characterized by linearity, resistance, surface potential and breakdown. Also, the suitable resistance of conductive implements can be derived from the excessive mobile charge criteria. At present, almost all the implements cannot guard devices against the charged device model event. However, the theory and methods will derive the suitable and realizable resistance for implement and device makers.

Published in:

Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.

Date of Conference:

19-23 Sept. 2004