Referenced Items are not available for this document.
Low-voltage diode-configured sige:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (f
As the faster transistors are produced in BiCMOS SiGe technology, low voltage trigger ESD networks will be required to achieve good ESD protection. Diode-configured SiGe HBT trigger elements are used in a SiGe C HBT power clamp network in a 200/285 GHz fT/fMAX silicon germanium heterojunction bipolar transistor (HBT) technology in a 0.13-propm CMOS technology base.
Published in:
Electrical Overstress/Electrostatic Discharge Symposium, 2004. EOS/ESD '04.
Date of Conference: 19-23 Sept. 2004
- Page(s):
- 1 - 10
- E-ISBN :
- 978-1-5853-7063-4
- Print ISBN:
- 978-1-5853-7063-4
- INSPEC Accession Number:
- 10915204
- Conference Location :
- Grapevine, TX
- Digital Object Identifier :
- 10.1109/EOSESD.2004.5272633
- Product Type:
- Conference Publications
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