By Topic

Low temperature Cu-Sn bonding by isothermal solidification technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yibo Rong ; Tsinghua Nat. Lab. for Inf. Sci. & Technol. (TNList), Beijing, China ; Jian Cai ; Shuidi Wang ; Songliang Jia

A low temperature wafer-to-wafer bonding technology for 3D packaging/integration based on Cu-Sn isothermal solidification (IS) technology is introduced in this paper. The fluxless bonding technique using Cu-Sn multilayer composites to produce higher re-melting temperature bonding layer is presented. The structure of the intermediate multilayers and bonding patterns are designed, and the bonding process is optimized. The microstructure of bonding layer was investigated by SEM (Scanning Electronic Microscopy) and EDS (Energy Dispersive X-Ray Spectrometer). The compositions of the bonding layer show that there are intermetallic compounds (IMCs) with higher melting points. The bonding layers consist of Cu6Sn5 and Cu3Sn phases. High strength of bonding layer has been detected, with average shear strength of 37.5MPa.

Published in:

Electronic Packaging Technology & High Density Packaging, 2009. ICEPT-HDP '09. International Conference on

Date of Conference:

10-13 Aug. 2009