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High Level Oscillations With Narrow Linewidth in Magnetic Nano-Contact Spin Torque Oscillator With Synthetic AF Spin-Valve Structure

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7 Author(s)
Hiroaki Endo ; Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan ; Toshiyuki Tanaka ; Masaaki Doi ; Susumu Hashimoto
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We investigated the current induced magnetization dynamics, so called spin torque oscillation, in magnetic nano-contact MR element with a synthetic antiferromagnetic type spin-valve structure under high in-plane applied magnetic field of 0.9-1 kOe. Very high level oscillation of 18 nVHz-1/2 with narrow FWHM of 12 MHz was observed in the condition of negative applied current where electron-spin is injected from free layer to reference one. Applied current dependency on an oscillation frequency is a blueshift with good linearlity, and same dependency on level and FWHM is almost constant in the range of -10 to -14 mA, while applied field dependency on frequency shows redshift with two different slopes, -2.5 MHz/Oe in less than 1 kOe and -8.7 MHz/Oe in more than 1 kOe which field is smaller than the spin-flop field for the synthetic antiferromagnet, besides very clear and reasonable peak and bottom for oscillation level and FWHM are observed, respectively. It is thought that these magnetization dynamics are originated from synthetic antiferromagnet.

Published in:

IEEE Transactions on Magnetics  (Volume:45 ,  Issue: 10 )