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Low-Voltage and High-Speed Operations of 30-nm-Gate Pseudomorphic \hbox {In}_{0.52}\hbox {Al}_{0.48}\hbox {As}/\hbox {In}_{0.7}\hbox {Ga}_{0.3} \hbox {As} HEMTs Under Cryogenic Conditions

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5 Author(s)
Endoh, Akira ; Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan ; Shinohara, K. ; Watanabe, I. ; Mimura, T.
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In this letter, we fabricated 30-nm-gate pseudomorphic In0.52 Al0.48As/In0.7Ga0.3As HEMTs with multilayer cap structures to reduce source and drain parasitic resistances; we measured their dc and radio-frequency characteristics at 300, 77, and 16 K under various bias conditions. The maximum cutoff frequency fT was 498 GHz at 300 K and 577 GHz at 77 K. The maximum fT exceeded 600 GHz at 16 K. Even at a drain-source voltage V ds of 0.4 V, we obtained an fT of 500 GHz at 16 K. This indicates that cryogenic HEMTs are favorable for low-voltage and high-speed operations. Furthermore, the present 30-nm-gate HEMTs at 300 K show almost the same fT values at the same dc-power dissipation as compared to 85-nm-gate InSb-channel HEMTs. The improvement of the maximum-oscillation-frequency f max values was also observed at 77 and 16 K.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )