By Topic

Tuning in to RF MEMS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Rebeiz, G.M. ; Univ. of California, La Jolla, CA, USA ; Entesari, K. ; Reines, I. ; Park, S.-J.
more authors

RF MEMS technology was initially developed as a replacement for GaAs HEMT switches and p-i-n diodes for low-loss switching networks and X-band to mm-wave phase shifters. However, we have found that its very low loss properties (high device Q), its simple microwave circuit model and zero power consumption, its high power (voltage/current) handling capabilities, and its very low distortion properties, all make it the ideal tuning device for reconfigurable filters, antennas and impedance matching networks. In fact, reconfigurable networks are currently being funded at the same level-if not higher-than RF MEMS phase shifters, and in our opinion, are much more challenging for high-Q designs.

Published in:

Microwave Magazine, IEEE  (Volume:10 ,  Issue: 6 )