Cart (Loading....) | Create Account
Close category search window
 

Multiband Mobility in Semiconducting Carbon Nanotubes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yang Zhao ; Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA ; Liao, Albert ; Pop, E.

We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm2/Vmiddots at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )

Date of Publication:

Oct. 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.