Referenced Items are not available for this document.
We present new data and a compact mobility model for semiconducting single-wall carbon nanotubes, with only two adjustable parameters, the elastic and inelastic collision mean free paths at 300 K. The mobility increases with diameter, decreases with temperature, and has a more complex dependence on charge density. The model and data suggest that the room temperature mobility does not exceed 10 000 cm2/Vmiddots at high carrier density (n > 0.5 nm-1) for typical single-wall nanotube diameters, due to the strong scattering effect of the second subband.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
10
)
Date of Publication: Oct. 2009
- Page(s):
- 1078 - 1080
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10881030
- Digital Object Identifier :
- 10.1109/LED.2009.2027615
- Product Type:
- Journals & Magazines
- Date of Publication :
- 09 September 2009
- Date of Current Version :
- 25 September 2009
- Issue Date :
- Oct. 2009
- Sponsored by :
- IEEE Electron Devices Society
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