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In Situ Comparison of Si/High- \kappa and \hbox {Si}/ \hbox {SiO}_{2} Channel Properties in SOI MOSFETs

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6 Author(s)
Loan Pham-Nguyen ; Lab. d''Hyperfreq. et Caracterisation, Inst. de Microelectron., Electromagn. et Photonique, Grenoble, France ; Fenouillet-Beranger, C. ; Vandooren, A. ; Skotnicki, T.
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Detailed measurements of front- and back-channel characteristics in advanced SOI MOSFETs (ultrathin Si film, high-kappa, metal gate, and selective epitaxy of source/drain) are used to reveal and compare the transport properties at the corresponding Si/high- kappa (HfO2 or HfSiON) and Si/SiO2 interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage, and subthreshold swing. As compared with Si/SiO2, the low-field mobility is lower at the Si/high-kappa interface and increases less rapidly at low temperature, reflecting additional scattering mechanisms governed by high-kappa and neutral defects.

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )