By Topic

An Ultra Wide-Band VCO Using MOS Varactor in 0.35µm SiGe BiCMOS Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Mokari, H. ; Dept. of Electr. Eng., Islamic Azad Univ. (IAU), Tehran, Iran ; Lotfi Neyestanak, A.A. ; Zandkarimi, G.

The fully integrated voltage-controlled oscillator is one of the most important and challenging building blocks in the implementation of a single-chip in today's communication system. In this paper design and realization of an ultra linear wide-band, low phase noise and low current consumption to achieve 4.16~6.1GHz tuning range, LC VCO for WLAN application is presented. Configuration of this circuit is simulated by AMOS 0.35 mum SiGe BiCMOS process that includes high-speed SiGe heterojunction bipolar transistor (HBTs).MOS varactor is used to realize a wide tuning range. The phase noise level is -103.478 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.9 GHz. the Kvco changes from 174 MHz/V to 205 MHz/V. It topology giving a linear wide tuning range greater 1900 MHz, from 4.160 GHz up to 6.035 GHz with a supply voltage of 3.0 V with DC current consumption is 2.26 mA.

Published in:

Computational Intelligence, Communication Systems and Networks, 2009. CICSYN '09. First International Conference on

Date of Conference:

23-25 July 2009