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Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

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7 Author(s)
Wei, Chia-Yu ; Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Adriyanto, F. ; Lin, Yu-Ju ; Li, Yu-Chang
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Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (kappa = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (gammas) on the surface of the HfOx layer were 1.304 nm and 34.24 mJ/cm2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm2/(V middots) .

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Electron Device Letters, IEEE  (Volume:30 ,  Issue: 10 )