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Over-temperature noise modeling of PHEMTs

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2 Author(s)
A. Boudiaf ; Univ. de Marne-la-Vallee, Noisy le Grand, France ; C. Dubon-Chevallier

A new procedure is presented for modeling the variations with temperature of the noise source coefficients related to the gate and the drain of a field effect transistor (FET). The experimental results obtained for a temperature range over -60°C to 140°C are compared to two recent similar studies, using a pseudomorphic HEMT. It is demonstrated that good agreement can be obtained for some of the temperature coefficients for both the small signal model and the internal noise sources

Published in:

Microwave Systems Conference, 1995. Conference Proceedings., IEEE NTC '95

Date of Conference:

17-19 May 1995