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A low cost 3.6 V single-supply GaAs power amplifier IC for the 1.9-GHz DECT system

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2 Author(s)
Griffiths, J. ; ITT GTC, Roanoke, VA, USA ; Sadhir, V.

A GaAs power amplifier IC in a SOIC-16 plastic package has been developed for the 1.9 GHz Digital European Cordless Telephone (DECT) system. The power amplifier consists of two stages with all matching structures on chip and has a total area of 1.84 mm2. At -2 dBm input power and 3.6 volts, the typical power amplifier achieves 26 dBm output power with 30% power-added efficiency, while operating from a single power supply in the SOIC-16 plastic package

Published in:

Microwave Systems Conference, 1995. Conference Proceedings., IEEE NTC '95

Date of Conference:

17-19 May 1995

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