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Browse Journals & Magazines > Sensors Journal, IEEE ...> Volume:9 Issue:10 Help

The Sensing Mechanism and the Response Simulation of the MIS Hydrogen Sensor

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6 Author(s)
Linfeng Zhang ; Dept. of Electr. Eng., Univ. of Bridgeport, Bridgeport, CT, USA ; McCullen, E. ; Rimai, Lajos ; Naik, R.
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The pure Pd and Pd alloy gated metal-insulator-semiconductor (MIS) hydrogen sensors have been studied. The chemical state of palladium in Pd and Pd alloy gated devices is similar and Pd alloy devices show a wide dynamic range. According to the hydrogen induced capacitance-voltage ( CV) shift and the response from a refreshed sensor, a new sensing mechanism is proposed that the hydrogen response is due to the protons on the metal/insulator interface and some of the protons take a long time to be desorbed from the interface. Based on this mechanism, a one-dimensional model is constructed with the consideration of the series resistance and fixed positive charges to simulate the CV/GV curves and hydrogen response from the Pd-Cr gated device.

Published in:
Sensors Journal, IEEE  (Volume:9 ,  Issue: 10 )

Date of Publication: Oct. 2009

Page(s):
1196 - 1201
ISSN :
1530-437X
INSPEC Accession Number:
10860132
Digital Object Identifier :
10.1109/JSEN.2009.2029450
Product Type:
Journals & Magazines
Date of Current Version :
28 August 2009
Issue Date :
Oct. 2009
Sponsored by :
IEEE Sensors Council

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