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A 2V BiCMOS receiver chip for L-S-C band personal networks

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6 Author(s)
Madihian, M. ; C&C Res. Lab., NEC Corp., Japan ; Bak, E. ; Imai, K. ; Yoshida, H.
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This paper concerns with the design and performance results of a receiver chip developed for personal networks applications utilizing a BiCMOS technology. The receiver, which integrates a bipolar RF amplifier, a BiCMOS simplified Gilbert mixer, and an NMOS IF amplifier, on a single chip, is designed to operate at 2 V over 1.8-5.4 GHz frequency band with a total power dissipation of 18 mW. Maximum conversion gain, LO-IF and RF-IF isolation are, respectively, 34 dB, 40 dB, and 32 dB.

Published in:

VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on

Date of Conference:

8-10 June 1995