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Reactive sputtering has been used for fabrication of AlN films. The process has been investigated in two levels of power of a generator, in two levels of the working pressure and in two levels of the working gas flow. The AlN films have been fabricated on a bottom Al electrodes and after sputtering of the AlN film a top Al electrode has been evaporated across the bottom one. This way capacitors have been formed. The capacitance and the loss factor of these capacitors have been measured. The process of fabrication of AlN films has been mathematically described using DOE.