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A novel 4H-SiC UMOSFET_ACCUFET with large blocking voltage

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2 Author(s)
Peyvast, N. ; Device & Process Modeling & Simulation Lab., Univ. of Tehran, Tehran, Iran ; Fathipour, M.

In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar's doping concentrations as well as widths.

Published in:

Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on

Date of Conference:

15-16 July 2009