Referenced Items are not available for this document.
In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar's doping concentrations as well as widths.
Published in:
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Date of Conference: 15-16 July 2009
- Page(s):
- 35 - 38
- E-ISBN :
- 978-1-4244-4952-1
- Print ISBN:
- 978-1-4244-4952-1
- INSPEC Accession Number:
- 10836281
- Conference Location :
- Kuala Lumpur
- Digital Object Identifier :
- 10.1109/ASQED.2009.5206303
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
