Skip to Main Content
In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar's doping concentrations as well as widths.
Date of Conference: 15-16 July 2009