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An all-in-one silicon Odometer for separately monitoring HCI, BTI, and TDDB

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3 Author(s)
Keane, J. ; Dept. of ECE, University of Minnesota, 200 Union Street SE, Minneapolis, 55455, USA ; Persaud, D. ; Kim, C.H.

An on-chip reliability monitor capable of separating the aging effects of HCI, BTI, and TDDB with sub-ps precision is presented. A pair of stressed ring oscillators is implemented in which one ages due to both BTI and HCI, while the other suffers from only BTI. Frequency degradation is monitored with a beat frequency detection system achieving sub-μ s measurement times. Measurement results are presented from a 65nm test chip over a range of stress conditions.

Published in:

VLSI Circuits, 2009 Symposium on

Date of Conference:

16-18 June 2009