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Novel DRAM mitigation technique

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3 Author(s)
A. Bougerol ; EADS IW, the European Aeronautic Defense and Space Company, Innovation Works, 12 rue Pasteur, 92150, Suresnes, France ; F. Miller ; N. Buard

This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.

Published in:

2009 15th IEEE International On-Line Testing Symposium

Date of Conference:

24-26 June 2009