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Influence of SiN composition on program and erase characteristics of SANOS-type flash memories

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9 Author(s)
Sandhya, C. ; Dept. of Electr. Eng., IIT Bombay, Mumbai, India ; Ganguly, U. ; Apoorva, B. ; Olsen, C.
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Composition of the silicon-nitride charge trap layer strongly impacts electron and hole trap properties. This significantly impacts charge trap flash memory performance and reliability. Important trade-offs between program/erase (P/E) levels (memory window) and retention loss is shown and critical trends identified. Increasing the Si-richness of the SiN layer improves memory window by increasing erase efficiency. E-state retention characteristics are improved but at the expense of higher P-state retention loss.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009

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