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Thermally oxidized LPCVD silicon as gate dielectric on GaN

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3 Author(s)
Sreenidhi, T. ; Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India ; DasGupta, A. ; DasGupta, N.

A two step gate dielectric deposition technique on GaN, viz. thermal oxidation of Low Pressure Chemical Vapor Deposited (LPCVD) silicon is reported. Current-Voltage (I-V) and Capacitance-Voltage (C-V) characterization of the Metal Insulator Semiconductor (MIS) capacitors are carried out to assess the interface properties. MIS devices with thermal oxide show improved I-V characteristics compared to those with Plasma Enhanced Chemical Vapor Deposited (PECVD) SiO2. However, Si deposition and oxidation schedule has to be carefully optimized to achieve high quality SiO2 on GaN.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009