Cart (Loading....) | Create Account
Close category search window
 

An analytical drain current model for undoped 4-T asymmetric double gate MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Syamal, B. ; Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India ; Saha, M. ; Mohankumar, N. ; Sarkar, C.K.

In this paper, we derive an analytical model of drain current for an Undoped 4-T asymmetric double gate MOSFET based on the solution of the 1D Poisson's equation. The equations are valid for both the subthreshold and superthreshold regime of operation. The current is formulated using the Pao-Sah's double integral method. The model can be used to study the effect of the different gate voltages, gate work functions and the oxide thickness of the front and back gate on the drain current of the undoped DG MOSFET. The results have been verified with a 2D device simulator and a good agreement is obtained.

Published in:

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Date of Conference:

1-2 June 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.