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Nonvolatile-Memory Characteristics of \hbox {AlO}^{-} -Implanted \hbox {Al}_{2}\hbox {O}_{3}

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6 Author(s)
Kim, M.C. ; Dept. of Appl. Phys., Kyung Hee Univ., Yongin, South Korea ; Kim, Sung ; Choi, Suk-Ho ; Belay, K.
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The nonvolatile-memory (NVM) characteristics of AlO- -implanted Al2O3 structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 8 )

Date of Publication:

Aug. 2009

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