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Quantifying yield impact of polishing induced defect on the silicon surface

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10 Author(s)
Ohta, H. ; Semicond. Equip. Bus. Group, Hitachi High-Technol. Corp., Tokyo, Japan ; Byeong Sam Moon ; Jea Gun Park ; Sang Hyun Lee
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The impact of PIDs on device yield was evaluated by detecting PIDs and performing a correlation analysis between the PID detection results and device yield of a probing test. It was consequently confirmed that PID can be detected sensitively with suitable wafer-surface inspection and SEM tools. It was also confirmed that PID correlates with device yield and that gate-dielectric defects are caused by PIDs. It is concluded that the PID is key factor in improving device yield, and we showed superior detection technology of PID.

Published in:

Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI

Date of Conference:

10-12 May 2009