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Low temperature grown polycrystalline La0.7Sr0.3MnO3 thin films on amorphous SiO2 substrates by rf magnetron sputtering

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6 Author(s)
Choi, Sun Gyu ; Department of Materials Science and Engineering, Yonsei University, 134 Sinchon-dong, Seodaemun-ku, Seoul 120-749, Korea ; Sivasankar Reddy, A. ; Park, Hyung-Ho ; Yang, Woo Seok
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The La0.7Sr0.3MnO3 thin films have been prepared on amorphous SiO2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:27 ,  Issue: 4 )