Referenced Items are not available for this document.
A new technique to determine oxide trap time constants in a 0.6 /spl mu/m n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs=-4 V and Vds=3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.
Published in:
Electron Device Letters, IEEE
(Volume:17
,
Issue:
8
)
Date of Publication: Aug. 1996
- Page(s):
- 398 - 400
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 5354968
- Digital Object Identifier :
- 10.1109/55.511587
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1996
- Sponsored by :
- IEEE Electron Devices Society
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