Cart (Loading....) | Create Account
Close category search window

A new technique to extract oxide trap time constants in MOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tahui Wang ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chang, T.E. ; Chiang, L.P. ; Huang, C.

A new technique to determine oxide trap time constants in a 0.6 /spl mu/m n-MOSFET subject to hot electron stress has been proposed. In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived. Our result shows that under a field-emission dominant oxide charge detrapping condition, Vgs=-4 V and Vds=3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds.

Published in:

Electron Device Letters, IEEE  (Volume:17 ,  Issue: 8 )

Date of Publication:

Aug. 1996

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.