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A 0.9 V, 4 K SRAM for embedded applications

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1 Author(s)
Caravella, J.S. ; Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA

A 4 Kb SRAM design is presented with functionality of 12 MHz at a supply voltage of 0.9 volts with a RMS run power (1 MHz) of 22 μW. The circuit operates at maximum frequency of 38 MHz at a supply voltage of 1.6 volts with a RMS run power (1 MHz) of 32 μW. The design utilizes a sub-blocked array architecture as well as selective use of NOR/NAND based decode logic. The sense amplifier design is a low voltage, glitch-free design to conserve power

Published in:

Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996

Date of Conference:

5-8 May 1996