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TFSOI complementary BiCMOS technology for low power RF mixed-mode applications

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9 Author(s)
W. M. Huang ; Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA ; D. Ngo ; J. Babcock ; H. C. Shin
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A Thin-Film-Silicon-On-Insulator Complementary BiCMOS technology has been developed for low power applications. The technology is based on a manufacturable, near-fully-depleted 0.5 μm CMOS process with the lateral bipolar device integrated as a drop-in module for CBiCMOS circuits. Excellent low power performance is demonstrated through low current ECL and low voltage CMOS circuits. For the first time, good RF and analog performance of a TFSOI (C)BiCMOS technology is demonstrated. Device gain, noise figure, 1/F noise and matching characteristics comparable to bulk BiCMOS technologies are achieved

Published in:

Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996

Date of Conference:

5-8 May 1996