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Bias Induced Strain Effects, Short-Range Electron - Electron Interactions and Quantum Effects in AlGaN/GaN HEMTs

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4 Author(s)
Ashok, A. ; Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ ; Vasileska, D. ; Goodnick, S.M. ; Hartin, O.

In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.

Published in:

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Date of Conference:

27-29 May 2009

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