System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

A Global EMC-FDTD Simulation Tool for High-Frequency Carrier Transport in Semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Willis, K.J. ; Dept. of Electr. & Comput. Eng., Univ. of Wisconsin, Madison, WI ; Hagness, S.C. ; Knezevic, I.

We present a computational tool for the characterization of conductive media at THz frequencies. By coupling the Ensemble Monte Carlo (EMC) simulator of carrier dynamics and the finite-difference time-domain (FDTD) solver of Maxwell's equations, we develop and characterize a robust and versatile global simulator that interactively tracks field-particle dynamics. In this report the EMC-FDTD simulator is used to model the interaction of bulk doped silicon with THz frequency electromagnetic plane waves. The performance of the simulation tool is investigated in terms of several simulation parameters, including grid cell size and carrier ensemble size. The complex conductivity of doped silicon at THz frequencies obtained from the combined EMC-FDTD solver is in good agreement with available experimental results.

Published in:

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Date of Conference:

27-29 May 2009