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3D Finite-Element Analysis of Metal Nanocrystal Memories Variations

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4 Author(s)
Shaw, J.T. ; Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY ; Hou, Tuo-Hung ; Raza, Hassan ; Kan, E.C.

We have shown the process variation effects from nanocrystal size, density, registry and gate length in 20-90 nm metal nanocrystal memory technology by 3D finite-element analysis. Conventional ID analysis in the gate stack will result in severe miscalculation of bit-error-rate due to neglecting the fringing fields and percolation path in the memory cell. We also present the statistical metrology on memory windows from nanocrystal placement control and the use of nanowire devices. We conclude that the self-assembled nanocrystals in the gate stack can fit the parametric yield required for 20 nm technology.

Published in:

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Date of Conference:

27-29 May 2009