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Technique for controlling effective Vth in multi-Gbit DRAM sense amplifier

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5 Author(s)
Saito, M. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Ogawa, J. ; Gotoh, K. ; Kawashima, S.
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We propose the use of a capacitor couple structure to control the effective threshold voltage (Vth) and its application to Vth fluctuation compensation in flip-flop sense amplifiers for multi-gigabit DRAMs. Our proposed sense amplifier functions correctly at up to a 500 mV fluctuation in Vth for the transistor pair in the latch. It does not require extra charging time in the sensing operation for compensation. In addition, the sense-amplifier speed is independent of the Vth value, so our S/A can also compensate the sensing speed fluctuation. This Vth control method and Vth-compensated sense amplifier opens up the possibility of utilizing transistors with gate lengths of less than 0.1 /spl mu/m, where the Vth variations could not be reduced.

Published in:

VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on

Date of Conference:

13-15 June 1996

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