By Topic

Development of silicon module with TSVs and global wiring (L/S=0.8/0.8µm)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sunohara, M. ; Technol. & Applic. Dev. Dept., Shinko Electr. Ind. Co., Ltd., Nagano ; Shiraishi, A. ; Taguchi, Y. ; Murayama, K.
more authors

In recent years, in order to achieve high density and high transmission speed between chips, various kinds of silicon modules have been developed. Our purpose is the development of silicon module in which several chips are mounted on the silicon substrate with Cu-Through Silicon Vias (Cu-TSVs) and fine multilayer Cu wirings such as global layer of devices. Since silicon substrate has a quite flat and smooth surface, fine wirings such as the global layer of devices can be formed. Furthermore, silicon interposer can be applied to a substrate, which show high reliability of micro bump interconnection for the reason of its same Coefficient of Thermal Expansion (CTE) with silicon devices. In this paper, key technologies required for the silicon interposer, that is, fabrication of submicron wiring on the silicon interposer, 1st level interconnection by Transient Liquid Phase (TLP) diffusion bonding, stress reduction at 2nd level interconnection using "Trenched Air Gap (TAG)-TSV" are reported. Finally signal integrity and stability of power/ground delivery for logic devices are also described.

Published in:

Electronic Components and Technology Conference, 2009. ECTC 2009. 59th

Date of Conference:

26-29 May 2009