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A Flexible Solution-Processed Memristor

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7 Author(s)
Gergel-Hackett, N. ; Nat. Inst. of Stand. & Technol., Gaithersburg, MD ; Hamadani, B. ; Dunlap, B. ; Suehle, J.
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A rewriteable low-power operation nonvolatile physically flexible memristor device is demonstrated. The active component of the device is inexpensively fabricated at room temperature by spinning a TiO2 sol gel on a commercially available polymer sheet. The device exhibits memory behavior consistent with a memristor, demonstrates an on/off ratio greater than 10 000 : 1, is nonvolatile for over 1.2 times 106 s, requires less than 10 V, and is still operational after being physically flexed more than 4000 times.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )

Date of Publication:

July 2009

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