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Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells

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8 Author(s)
Ray-Hua Horng ; Inst. of Precision Eng., Nat. Chung Hsing Univ., Taichung ; Shih-Ting Lin ; Yu-Li Tsai ; Mu-Tao Chu
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In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )

Date of Publication:

July 2009

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