Referenced Items are not available for this document.
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
Published in:
Electron Device Letters, IEEE
(Volume:30
,
Issue:
7
)
Date of Publication: July 2009
- Page(s):
- 745 - 747
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 10731591
- Digital Object Identifier :
- 10.1109/LED.2009.2020615
- Product Type:
- Journals & Magazines
- Date of Publication :
- 02 June 2009
- Date of Current Version :
- 23 June 2009
- Issue Date :
- July 2009
- Sponsored by :
- IEEE Electron Devices Society
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