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High-Density and Low-Leakage-Current MIM Capacitor Using Stacked \hbox {TiO}_{2}/\hbox {ZrO}_{2} Insulators

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4 Author(s)
Lin, S.H. ; Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu ; Chiang, K.C. ; Chin, Albert ; Yeh, F.S.

We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 times 10-8 A/cm2 at 125degC was obtained with a high 38- fF/mum2 capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )

Date of Publication:

July 2009

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