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Elimination of Forming Process for TiOx Nonvolatile Memory Devices

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3 Author(s)
Wei Wang ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA ; Fujita, Shinobu ; Wong, S.S.

This letter studies the physical mechanism for the high-voltage forming process that is required before a TiOx resistance-change memory device can be set and reset repeatedly. A new in situ fabrication process has been developed and demonstrated to eliminate the high-voltage forming.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )