Defects in CdHgTe grown by molecular beam epitaxy on (211)B-oriented CdZnTe substrates

A systematic study of the evolution of the defect morphology and crystalline quality in molecular beam epitaxially grown Cd_xHg_1-xTe epilayers with growth temperature is presented. The layers were characterized with optical microscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and high-resolution x-ray diffraction. Four types of defects (microvoids, hillocks, high-temperature voids, and needles) were characterized on epilayers grown in the growth temperature range 188.9-209.9 °C. There is a minimum in the area covered by defects at a temperature just below the onset of Te precipitation, which is defined as the optimal growth temperature. Microvoids with various shapes, and at various stages of growth, were observed side-by-side in many of the Cd_xHg_1-xTe layers, along with hillocks and needles. The defect density of microvoids changes by several orders of magnitude in the studied temperature range. A mechanism for the formation of microvoids and needles is suggested. High-temperature voids associated with Te precipitates appear above the optimal growth temperature. The onset of Te precipitation is well described by a thermodynamic model.