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Exposure latitude of deep-ultraviolet conformable contact photolithography

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3 Author(s)
Fucetola, C.P. ; The Charles Stark Draper Laboratory, 555 Technology Square, Cambridge, Massachusetts 02139 ; Carter, D.J.D. ; Goodberlet, J.G.

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The authors present for the first time a study of the exposure latitude of deep-ultraviolet conformable contact photolithography in a nonevanescent regime. Exposures of grating patterns with half-pitches ranging from several hundred nanometers to 100 nm are simulated and experimentally demonstrated using an optimized trilayer resist stack. They show that a mask geometry with the absorber embedded in the glass improves image contrast, and therefore exposure latitude over a conventional chrome-on-glass mask geometry. They show that conformable contact photolithography is suitable for printing 500–100 nm half-pitch features with an exposure latitude of ±22% for ±15% linewidth tolerance.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 1 )