By Topic

Boron nanobelts grown under intensive ion bombardment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Li, W.T. ; Plasma Research Lab, Research School of Physical Sciences and Engineering, The Australian National University, Australian Capital Territory 0200, Australia ; Boswell, R. ; Fitz Gerald, J.D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2827498 

High-quality α-tetragonal crystalline boron nanobelts with [001] growth axis were synthesized using a novel method combining e-beam evaporation and plasma ion bombardment techniques. Intensive ion bombardment of the growing boron nanobelts at a high substrate temperature (∼1200 °C) was found to be effective in increasing the atomic density, reducing the crystal disorder, and improving the yield of the nanobelts.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:26 ,  Issue: 1 )