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Improved performance of a dual-passivated heterojunction bipolar transistor

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3 Author(s)
Cheng, Shiou-Ying ; Department of Electronic Engineering, National Ilan University, No.1, Sec. 1, Shen-Lung Road, I-Lan, Taiwan 26041, Republic of China ; Fu, Ssu-I ; Wen-Chau Liu

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Dual passivation (with ledge structure and sulfur treatment) on base surface is employed to improve device performance of an InGaP/GaAs heterojunction bipolar transistor (HBT). By using this dual-passivation technique, good transistor characteristics such as dc current gain βF, offset voltage ΔVCE, specific contact resistance ρC, and sheet resistance Rsh are obtained. In addition, the InGaP/GaAs HBT with dual passivation exhibits improved thermal stability and microwave characteristics. Our experimental results suggest that the dual-passivated device can be used for high-temperature and/or low-power electronics applications.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 3 )