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Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

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10 Author(s)
Polyakov, A.Y. ; Institute of Rare Metals, B. Tolmachevsky 5, Moscow 119017, Russia ; Smirnov, N.B. ; Govorkov, A.V. ; Vdovin, V.I.
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The electrical properties, deep level spectra, optical transmission, and luminescence spectra were measured on freestanding GaN crystals grown by hydride vapor phase epitaxy. The samples are semi-insulating n type with room temperature resistivity of 3.8×109 Ω cm and high electron mobility of 715 cm2/V s. The Fermi level in these samples is pinned by a Fe-related level near Ec-0.57 eV that could be due to the Fe2+/Fe3+ transition. This level manifests itself also as a strong blue luminescence band peaked near 2.85 eV. An additional Fe-related band with optical threshold near 1.6 eV is observed in optical transmission spectra. The samples are paramagnetic, suggesting an absence of significant Fe precipitation.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 3 )