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Field emission from GaN and (Al,Ga)N/GaN nanorod heterostructures

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5 Author(s)
Deb, Parijat ; School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 ; Westover, Tyler ; Kim, Hogyoung ; Fisher, Timothy
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Vacuum field emission from GaN and (Al,Ga)N/GaN nanorods with pyramidal tips has been measured. The turn-on fields, defined at a current density of 0.1 μA/cm2, were found to be 38.7 and 19.3 Vm, for unintentionally doped GaN and (Al,Ga)N/GaN nanorods, respectively. The 5 nm (Al,Ga)N layer reduced the electron affinity at the surface, thereby lowering the turn-on field and increasing the current density. The nanostructures exhibit a field enhancement factor of approximately 65 and the work function of the (Al,Ga)N/GaN nanorod heterostructure was estimated to be 2.1 eV. The stability of the emission characteristics and the simple fabrication method suggest that intentionally doped and optimized (Al,Ga)N/GaN nanorod heterostructures may prove suitable for field-emission device.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:25 ,  Issue: 3 )