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Postannealing effect on pseudobilayer HfO2/HfSixOy/Si gate oxides formed by an inductively coupled sputtering process

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6 Author(s)
Choi, Won Joon ; New Functional Material and Device Laboratory, Department of Physics, Hanyang University, Seoul 133-791, Korea ; Lee, Eun Joung ; Lee, Jong Hyun ; Yang, Jung Yup
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Pseudobilayer HfO2/HfSixOy gate dielectrics in metal-oxide-semiconductor devices were prepared using an inductively coupled rf plasma sputtering technique. This sputtering method was designed to improve the uniformity and efficiency of formation of high-quality gate dielectrics at room temperature. Crystallization of the gate dielectrics was easily controlled from amorphous to monoclinic by varying the external power from 0 to 60 W at RT. The chemical bond states of the interfacial layers in the as-deposited and postannealed samples were analyzed with an x-ray photoelectron spectroscopy (XPS) system. The XPS results revealed that the interfacial layers of the as-deposited and annealed samples were hafnium silicide and hafnium silicate, respectively. Compared with the as-deposited sample, the pseudobilayer HfO2/HfSixOy gate dielectric annealed at 750 °C yielded excellent electrical characteristics due to the hafnium silicate interfacial layer. The dielectric constant and leakage current of the postannealed samples were about 15 at 100 kHz and less than ∼10-6 A/cm2 at -1.5 V, respectively.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 4 )