By Topic

Postannealing effect on pseudobilayer HfO2/HfSixOy/Si gate oxides formed by an inductively coupled sputtering process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Choi, Won Joon ; New Functional Material and Device Laboratory, Department of Physics, Hanyang University, Seoul 133-791, Korea ; Lee, Eun Joung ; Lee, Jong Hyun ; Yang, Jung Yup
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2214706 

Pseudobilayer HfO2/HfSixOy gate dielectrics in metal-oxide-semiconductor devices were prepared using an inductively coupled rf plasma sputtering technique. This sputtering method was designed to improve the uniformity and efficiency of formation of high-quality gate dielectrics at room temperature. Crystallization of the gate dielectrics was easily controlled from amorphous to monoclinic by varying the external power from 0 to 60 W at RT. The chemical bond states of the interfacial layers in the as-deposited and postannealed samples were analyzed with an x-ray photoelectron spectroscopy (XPS) system. The XPS results revealed that the interfacial layers of the as-deposited and annealed samples were hafnium silicide and hafnium silicate, respectively. Compared with the as-deposited sample, the pseudobilayer HfO2/HfSixOy gate dielectric annealed at 750 °C yielded excellent electrical characteristics due to the hafnium silicate interfacial layer. The dielectric constant and leakage current of the postannealed samples were about 15 at 100 kHz and less than ∼10-6 A/cm2 at -1.5 V, respectively.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 4 )