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Comparison of high resolution negative electron beam resists

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10 Author(s)
Bilenberg, B. ; MIC - Department of Micro and Nanotechnology, Nano.DTU, Technical University of Denmark (DTU), DK-2800 Kongens Lyngby, Denmark ; Schøler, M. ; Shi, P. ; Schmidt, M.S.
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Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000.1XP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2. 20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 4 )