Cart (Loading....) | Create Account
Close category search window
 

Chemical bonding and interdiffusion in scaled down SiO2/Si3N4/SiO2 stacks with top oxide formed by thermal ed copyoxidation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Saraf, Meirav ; Department of Chemistry, Technion-Israel Institute of Technology, Haifa 32000, Israel ; Edrei, Rachel ; Akhvlediani, Roza ; Roizin, Yakov
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2209990 

The influence of thermal oxidation on the composition of silicon nitride films in SiO2/Si3N4/SiO2 stacks for advanced nonvolatile memories is reported. X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses lead to the conclusion that wet thermal (pyrogenic) oxidation of silicon nitride enhances the incorporation of oxygen into the silicon nitride layer and creates a silicon oxynitride layer. In the oxynitride layer formed by wet oxidation, O is mostly bonded to N, whereas in the native oxynitride at the silicon nitride surface, O is preferentially bonded to Si. Dry oxidation (1200 °C) results in an even higher amount of oxygen incorporation into the silicon nitride layer as compared with the pyrogenic process. After both pyrogenic and dry oxidation, hydrogen concentration decreases in the bulk of the silicon nitride layer. Following wet oxidation, hydrogen was found to accumulate at the surface layers of the grown oxynitride film. Oxygen penetration into the nitride layer was found to be higher in thinner nitride layers. The peculiarities of hydrogen distribution were not affected by the thickness of the nitride layer.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 4 )

Date of Publication:

Jul 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.