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Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

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7 Author(s)
Lei, Po-Hsun ; Department of Computer Science Engineering, Diwan College of Management, Madou, Tainan 721, Taiwan, Republic of China ; Yang, Chyi-Dar ; Wu, Ming-Yuan ; Meng-Chyi Wu
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We report the fabrication, characterization, and comparison of four 1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well (SC-MQW) laser structures: (1) sample A—with only an undoped SC-MQW active region, (2) sample B—with an undoped SC-MQW active region and a linear graded-composition (LGC) GaInAsP intermediate layer, (3) sample C—with an n-type modulation-doping (MD) SC-MQW active region, and (4) sample D—with an n-type MD-SC-MQW active region combined with a LGC GaInAsP intermediate layer. The inclusion of either n-type modulation-doped SC-MQW active region or LGC GaInAsP intermediate layer can improve the performance of a laser diode (LD). The LD sample D, which includes both an n-type MD-SC-MQW active region and a LGC GaInAsP intermediate layer, exhibits the best overall performance including a threshold current of 12.5 mA, a characteristic temperature of 85 K in 20–80 °C temperature range, a lasing wavelength shift of 0.38 nm/K, and a relaxation frequency response of 9.9 GHz.

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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:24 ,  Issue: 2 )